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| CM75TL-12NF Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM75TL-12NF
Six IGBTMOD⢠NF-Series Module
75 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 300V
VGE = ±15V
RG = 8.3â¦
Tj = 25°C
Inductive Load
Irr
102
trr
102
GATE CHARGE VS. VGE
20
IC = 75A
16
VCC = 200V
12
VCC = 300V
8
101
100
101
EMITTER CURRENT, IE, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 300V
VGE = ±15V
IC = 75A
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
101
ESW(off)
101
102
100
100
101
102
GATE RESISTANCE, RG, (â¦)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
4
0
0 100 200 300 400 500
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
100
Err
10-1
10-2
100
VCC = 300V
VGE = ±15V
RG = 8.3â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
101
EMITTER CURRENT, IE, (AMPERES)
102
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
101 VCC = 300V
VGE = ±15V
RG = 8.3â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
100
ESW(off)
10-1
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
100
Err
10-1
10-2
100
VCC = 300V
VGE = ±15V
IE = 75A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
GATE RESISTANCE, RG, (â¦)
102
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.29°C/W
(IGBT)
Rth(j-c) =
0.51°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
10/10 Rev. 1
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