CM75TL-12NF Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM75TL-12NF
Six IGBTMOD™ NF-Series Module
75 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T_C = 102°C)*
Peak Collector Current (Tj ≤ 150°C)
Emitter Current***
Peak Emitter Current***
Maximum Collector Dissipation (T_C = 25°C, T_j < 150°C)
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
—
—
—
V_ISO
CM75TL-12NF
-40 to 150
-40 to 125
600
±20
75
150**
75
150**
430
31
31
350
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
—
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 7.5mA, V_CE = 10V
6
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
—
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 75A, V_GE = 15V, T_j = 25°C
—
I_C = 75A, V_GE = 15V, T_j = 125°C
—
Input Capacitance
C_ies
—
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
—
Reverse Transfer Capacitance
C_res
—
Total Gate Charge
Q_G
V_CC = 300V, I_C = 75A, V_GE = 15V
—
Inductive
Turn-on Delay Time
t_d(on)
—
Load
Turn-on Rise Time
t_r
V_CC = 300V, I_C = 75A,
—
Switch
Turn-off Delay Time
t_d(off)
V_GE1 = V_GE2 = 15V,
—
Time
Turn-off Fall Time
t_f
R_G = 8.3Ω, I_E = 75A,
—
Reverse Recovery Time***
t_rr
Inductive Load Switching Operation
—
Reverse Recovery Charge***
Qrr
—
Emitter-Collector Voltage***
V_EC
I_E = 75A, V_GE = 0V
—
*T_C, T_f measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ. Max. Units
—
1.0
mA
7
8
Volts
—
0.5
µA
1.7
2.2
Volts
1.7
—
Volts
—
11.3
nf
—
1.4
nf
—
0.45
nf
300
—
nC
—
120
ns
—
100
ns
—
300
ns
—
300
ns
—
100
ns
1.2
—
µC
—
2.8
Volts
2
10/10 Rev. 1