CM75TL-12NF Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM75TL-12NF
Six IGBTMOD™ NF-Series Module
75 Amperes/600 Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*T_C, T_f measured point is just under the chips.
R_th(j-c)Q
Per IGBT 1/6 Module
—
R_th(j-c)D
Per FWDi 1/6 Module
—
R_th(c-f) Per 1/6 Module, Thermal Grease Applied —
R_G
8.3
Typ.
Max. Units
—
0.29 °C/W
—
0.51 °C/W
—
0.085 °C/W
—
83
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
150
V_GE = 20V
15
T_j = 25°C
13
12
100
11
50
10
89
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
10¹
01
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
0
0
50
100
150
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
V_GE = 0V
10¹
C_ies
10⁰
C_oes
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 150A
6
4
I_C = 75A
I_C = 30A
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_f
10²
t_d(on)
10¹
10⁰
10⁰
t_r
V_CC = 300V
V_GE = ±15V
R_G = 8.3Ω
T_j = 125°C
Inductive Load
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10/10 Rev. 1
3