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| CM600HU-12F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-12F
Trench Gate Design Single IGBTMODâ¢
600 Amperes/600 Volts
1200
1000
OUTPUT CHARACTERISTICS
(TYPICAL)
11
Tj = 25oC 15
VGE = 20V
10
9.5
800
9
600
8.5
400
200
8
7.5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
Tj = 25°C
103
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
VGE = 15V
Tj = 25°C
Tj = 125°C
2
1
0
0 200 400 600 800 1000 1200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
103
Cies
102
102
101
0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
102
trr
102
101
101
Irr
VCC = 300V
VGE = ±15V
RG = 3.1 â¦
Tj = 25°C
Inductive Load 101
102
103
EMITTER CURRENT, IE, (AMPERES)
101
Coes
VGE = 0V
Cres
100
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 600A
16
VCC = 200V
VCC = 300V
12
8
4
0
0 1000 2000 3000 4000 5000
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 1200A
2
IC = 600A
1
IC = 240A
0
0
103
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tf
102
101
101
tr
VCC = 300V
VGE = ±15V
RG = 3.1 â¦
Tj = 125°C
Inductive Load
102
103
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10110-3
10-2
10-1
100
101
Per Unit Base
Rth(j-c) = 0.088°C/W (IGBT)
100
Rth(j-c) = 0.12°C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
4
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