CM600HU-12F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM600HU-12F
Trench Gate Design Single IGBTMOD™
600 Amperes/600 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current** (T_c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T_c = 25°C)
Mounting Torque, M8 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
Mounting Torque, M6 Mounting
–
Mounting Torque, M4 Terminal
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
CM600HU-12F
-40 to 150
-40 to 125
600
±20
600
1200*
600
1200*
1420
95
40
15
450
2500
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
I_CES
V_CE = V_CES, V_GE = 0V
–
I_GES
V_GE = V_CES, V_CE = 0V
–
V_GE(th)
I_C = 60mA, V_CE = 10V
5
V_CE(sat)
I_C = 600A, V_GE = 15V, T_j = 25°C
–
I_C = 600A, V_GE = 15V, T_j = 125°C
–
Q_G
V_CC = 300V, I_C = 600A, V_GE = 15V
–
V_EC
I_E = 600A, V_GE = 0V
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
6
1.6
1.6
3720
–
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Max.
1
80
7
2.2
–
–
2.6
Units
mA
µA
Volts
Volts
Volts
nC
Volts
2