CM600HU-12F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600HU-12F
Trench Gate Design
Single IGBTMOD™
600 Amperes/600 Volts
N (2 TYP)
A
D
F
G
G
E
E
CL
M (2 TYP.)
C
P
E
CM
B
H
J
L (4 TYP)
Q
K
R
TC MEASURING
POINT
C
E
C
RTC
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
4.21
107.0
B
2.44
62.0
C 1.34 +0.04/-0.02 34.0 +1.0/-0.5
D
3.66±0.01
93.0±0.25
E
1.88±0.01
48.0±0.25
F
0.37
9.5
G
0.39
10.0
H
0.53
13.5
Dimensions Inches
Millimeters
J
1.02
26.0
K
1.14
29.0
L
0.26 Dia
6. .5 Dia.
M
M8
M8
N
M4
M4
P
0.49
12.55
Q 1.02 +0.04/-0.02 26.0 +1.0/-0.5
R
0.81
20.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-12F is a
600V (V_CES), 600 Ampere Single
IGBTMOD™ Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
600
12
1