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| CM600HA-5F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-5F
Trench Gate Design Single IGBTMODâ¢
600 Amperes/250 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.13°C/W
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.185°C/W
100
10-1
10-2
10-3
10-3
10-2
10-1
100
101
TIME, (s)
372
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