English
Language : 

CM600HA-5F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
◁
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-5F
Trench Gate Design Single IGBTMOD™
600 Amperes/250 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Maximum Mounting Torque, M6 Terminal Screws
Maximum Mounting Torque, M6 Mounting Screws
Maximum Mounting Torque, M4 (G, E) Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IF
IFM
Pd
—
—
—
—
VRMS
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
VGE(th)
VCE(sat)
QG
VFM
IC = 60mA, VCE = 10V
IC = 600A, VGE = 10V,
IC = 600A, VGE = 10V, Tj = 150°C
VCC = 50V, IC = 600A, VGS = 10V
IE = 600A, VGS = 0V
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
CIES
Output Capacitance
COES
VGE = 0V, VCE = 10V
Reverse Transfer Capacitance
CRES
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
td(on)
tr
td(off)
tF
trr
Qrr
VCC = 50V, IC = 600A,
VGE1 = VGE2 = 10V, RG = 4.2Ω,
Resistive Load
IE = 600A, diE/dt = -1200A/ms
IE = 600A, diE/dt = -1200A/ms
CM600HA-5F
-40 to 150
-40 to 125
250
±20
600
1200
600
1200
960
26
26
13
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Min.
Typ. Max. Units
—
—
1.0
mA
—
—
0.5
µA
3.0
4.0
5.0
Volts
—
1.2
1.7
Volts
—
1.1
—
Volts
—
2200
—
nC
—
—
2.0
Volts
Min.
Typ. Max. Units
—
—
165
nF
—
—
7.5
nF
—
—
5.6
nF
—
—
1000
ns
—
—
4000
ns
—
—
1000
ns
—
—
500
ns
—
—
300
ns
—
9.5
—
µC
Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
—
—
Thermal Resistance, Junction to Case
Rth(j-c)
Free Wheel Diode
—
—
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
—
—
Max.
0.13
0.19
0.040
Units
°C/W
°C/W
°C/W
370
 ▷