CM600HA-5F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM600HA-5F
Trench Gate Design Single IGBTMOD™
600 Amperes/250 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
1200
T_j = 25^oC
5.75
10
1000
8
V_GE = 15V
6
5.5
800
600
5.25
400
5.0
200
4.5 _4.75
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
3
I_C = 600A
2
I_C = 1200A
1
I_C = 240A
0
0
5
10
15
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
V_CC = 100V
V_GE = ±10V
R_G = 4.2Ω
T_j = 125°C
10³
t_d(off)
t_d(on)
t_f
10²
10¹
t_r
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
1200
1000
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
800
600
400
200
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10⁴
T_j = 25°C
10³
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
V_GE = 15V
T_j = 25°C
T_j = 125°C
1.5
1.0
0.5
0
0 200 400 600 800 1000 1200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10³
V_GE = 0V
f = 1MHz
C_ies
10²
10²
10¹
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
di/dt = -1200A/µsec
T_j = 25°C
t_rr
10²
I_rr
10²
10¹
C_oes
10⁰
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
IC = 600A
15
V_CC = 50V
V_CC = 100V
10
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10¹
10³
5
0
0
1
2
3
4
5
GATE CHARGE, Q_G, (µC)
371