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| CM600DU-24NFH Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM600DU-24NFH
Dual IGBTMOD⢠NFH-Series Module
600 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
td(on)
102
tr
tf
101
100
101
VCC = 600V
VGE = ±15V
RG = 1.0â¦
Tj = 125°C
Inductive Load
102
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
102 VCC = 600V
VGE = ±15V
RG = 0.52â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
101
ESW(off)
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
Err
101
100
10-1
VCC = 600V
VGE = ±15V
IE = 600A
Tj = 125°C
Inductive Load
C Snubber at Bus
100
GATE RESISTANCE, RG, (â¦)
101
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 600V
VGE = ±15V
RG = 1.0â¦
Tj = 25°C
Inductive Load
Irr
102
trr
102
101
101
102
102
EMITTER CURRENT, IE, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
101
103
GATE CHARGE VS. VGE
20
IC = 600A
16
VCC = 400V
12
VCC = 600V
8
4
0
0
1000 2000 3000 4000
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
102
101
100
10-1
VCC = 600V
VGE = ±15V
IC = 600A
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
100
GATE RESISTANCE, RG, (â¦)
101
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
101
100
101
Err
VCC = 600V
VGE = ±15V
RG = 0.52â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
103
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.083°C/W
(IGBT)
Rth(j-c) =
0.15°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
07/11 Rev. 2
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