CM600DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Rth(j-c)'D Per FWDi 1/2 Module, TC Reference
—
TC Reference Point Under Chips
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
RG
0.52
Typ.
Max. Units
—
0.083 °C/W
—
0.15 °C/W
—
0.034 °C/W
—
0.06 °C/W
0.02
—
°C/W
—
5.2
Ω
1200
1000
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25^oC
V_GE = 20V
14
15
13
12
800
600
11
400
10
200
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25^oC
8
I_C = 1200A
6
I_C = 600A
4
I_C = 240A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
1200
1000
800
TRANSFER CHARACTERISTICS
(TYPICAL)
V_GE = 10V
T_j = 25^oC
T_j = 125^oC
600
400
200
0
0
10⁴
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T_j = 25^oC
T_j = 125^oC
10³
10²
10¹
01
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
V_GE = 15V
T_j = 25^oC
7
T_j = 125^oC
6
5
4
3
2
1
0
0 200 400 600 800 1000 1200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
V_GE = 0V
10²
C_ies
10¹
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
07/11 Rev. 2
3