CM600DU-24NFH Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM600DU-24NFH
Dual IGBTMOD™ NFH-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
PC
—
—
—
VISO
CM600DU-24NF
–40 to 150
–40 to 125
1200
±20
600*
1200*
600*
1200*
1550
3700
40
40
580
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 60mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 600A, VGE = 15V, Tj = 25°C
IC = 600A, VGE = 15V, Tj = 125°C
Total Gate Charge
QG
VCC = 600V, IC = 600A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 600A, VGE = 0V
Min.
Typ.
Max. Units
—
—
1.0
mA
—
—
2.0
µA
4.5
6.0
7.5
Volts
—
5.0
6.5
Volts
—
5.0
—
Volts
—
2700
—
nC
—
—
3.5
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Time
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 600V, IC = 600A,
VGE1 = VGE2 = 15V, RG = 0.52Ω,
Inductive Load
Switching Operation,
IE = 600A
—
—
95
nF
—
—
8.0
nF
—
—
1.8
nF
—
—
400
ns
—
—
120
ns
—
—
700
ns
—
—
150
ns
—
—
250
ns
—
28
—
µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
07/11 Rev. 2