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CM450DX-34SA Datasheet, PDF (4/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 450 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R25
∆R/R
B(25/50)
P25
Test Conditions
TC = 25°C*2
TC = 100°C, R100 = 493Ω
Approximate by Equation*6
TC = 25°C*2
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*2
Thermal Resistance, Junction to Case*2
Contact Thermal Resistance,
Case to Heatsink*2
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per Inverter IGBT
Per Inverter FWDi
Thermal Grease Applied
(Per 1 Module)*7
Mechanical Characteristics
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
Mt
Mounting to Heatsink, M6 Screw
Ms
Mounting to Heatsink, M5 Screw
ds
Terminal to Terminal
Terminal to Baseplate
da
Terminal to Terminal
Terminal to Baseplate
m
ec
On Centerline X, Y*8
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage
VCC
Applied Across C1-E2
Gate (-Emitter Drive) Voltage
VGE(on)
Applied Across G1-Es1 / G2-Es2
External Gate Resistance
RG
Per Switch
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6
B(25/50) = In(RR5205)/(T215
1
– T50
)
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Di2 Tr2
Di2 Tr2
Th
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
—
—
0.05
K/W
—
—
0.08
K/W
—
15
—
K/kW
31
35
40
in-lb
22
27
31
in-lb
17.0
—
—
mm
10.0
—
—
mm
17.5
—
—
mm
10.0
—
—
mm
—
330
— Grams
±0
—
+100
µm
—
1000 1200 Volts
14.0 15.0 16.5 Volts
1.2
—
27
Ω
Di1 Di1
Tr1 Tr1
LABEL SIDE
46.4
35.4
32.4
23.0
21.2
0
MOUNTING SIDE
MOUNTING SIDE
Y
MOUNTING
X SIDE
– : CONCAVE
+ : CONVEX
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
4
04/13 Rev. 0