CM450DX-34SA Datasheet, PDF (3/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 450 Amperes/1700 Volts

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CM450DX-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
I_CES
I_GES
V_GE(th)
V_CE(sat)
(Terminal)
V_CE(sat)
(Chip)
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
I_C = 45mA, V_CE = 10V
I_C = 450A, V_GE = 15V, T_j = 25°C^*5
I_C = 450A, V_GE = 15V, T_j = 125°C^*5
I_C = 450A, V_GE = 15V, T_j = 150°C^*5
I_C = 450A, V_GE = 15V, T_j = 25°C^*5
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC^*1
(Terminal)
V_EC^*1
(Chip)
V_CE = 10V, V_GE = 0V
V_CC = 1000V, I_C = 450A, V_GE = 15V
V_CC = 1000V, I_C = 450A, V_GE = ±15V,
R_G = 1.2Ω, Inductive Load
I_E = 450A, V_GE = 0V, T_j = 25°C^*5
I_E = 450A, V_GE = 0V, T_j = 125°C^*5
I_E = 450A, V_GE = 0V, T_j = 150°C^*5
I_E = 450A, V_GE = 0V, T_j = 25°C^*5
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
t_rr^*1
Q_rr^*1
E_on
E_off
E_rr^*1
R_{CC' + EE'}
r_g
V_CC = 1000V, I_E = 450A, V_GE = ±15V
R_G = 1.2Ω, Inductive Load
V_CC = 1000V, I_C = I_E = 450A,
V_GE = ±15V, R_G = 1.2Ω,
T_j = 150°C, Inductive Load
Main Terminals-Chip,
Per Switch,T_C = 25°C^*2
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Di2 Tr2
Di2 Tr2
Th
Min.
Typ. Max. Units
—
—
1
mA
—
—
0.5
µA
5.4
6.0
6.6
Volts
—
2.4
3.05 Volts
—
2.9
—
Volts
—
3.0
—
Volts
—
2.25
2.9
Volts
—
—
79
nF
—
—
8
nF
—
—
1.36
nF
—
1656
—
nC
—
300
600
ns
—
120
240
ns
—
350
700
ns
—
120
240
ns
—
5.05 6.25 Volts
—
3.8
—
Volts
—
3.6
—
Volts
—
4.90
6.10
Volts
—
100
200
ns
—
90
—
µC
—
80
—
mJ
—
98
—
mJ
—
61
—
mJ
—
—
2.0
mΩ
—
1.7
—
Ω
Di1 Di1
Tr1 Tr1
LABEL SIDE
46.4
35.4
32.4
23.0
21.2
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
04/13 Rev. 0
3