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CM450DX-34SA Datasheet, PDF (2/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 450 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (DC, TC = 125°C)*2
Collector Current (Pulse)*3
Collector Current (VGE = 15V , Pulse, Repetitive)*3
Total Power Dissipation (TC = 25°C)*2,*4
Emitter Current (TC = 25°C)*2,*4
Emitter Current (Pulse)*3
Emitter Current (Pulse, TC = 25°C)*2,*4
Maximum Junction Temperature
Maximum Case Temperature*2
Operating Junction Temperature
Storage Temperature
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
Symbol
VCES
VGES
IC
IC
ICRM
Ptot
IE*1
IE*1
IERM*1
Tj(max)
TC(max)
Tj(op)
Tstg
VISO
Di2 Tr2
Di2 Tr2
Th
Rating
1700
±20
300
450
900
3000
300
450
900
175
125
-40 to +150
-40 to +125
4000
Units
Volts
Volts
Amperes
Amperes
Amperes
Watts
Amperes
Amperes
Amperes
°C
°C
°C
°C
Volts
Di1 Di1
Tr1 Tr1
LABEL SIDE
46.4
35.4
32.4
23.0
21.2
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
04/13 Rev. 0