CM1800HCB-34N Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4.0
V_GE = 15V
3.5
T_j = 25°C
3.0
T_j = 125°C
2.5
2.0
1.5
1.0
0.5
0
0 500 1000 1500 2000 2500 3000 3500
COLLECTOR CURRENT, I_C, (AMPERES)
GATE CHARGE, V_GE
20
I_C = 1800A
V_CC = 900V
16 T_j = 25°C
12
8
4
0
0
4
8
12 16 20
GATE CHARGE, Q_G, (µC)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
1200
1000
800
V_CC = 900V
V_GE = ±15V
R_G(on) = 0.7Ω
L_S = 100nH
T_j = 125°C
600
400
200
0
0 500 1000 1500 2000 2500 3000
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
4.0
V_GE = 15V
3.5
T_j = 25°C
3.0
T_j = 125°C
2.5
2.0
1.5
1.0
0.5
0
0 500 1000 1500 2000 2500 3000 3500
EMITTER CURRENT, I_E, (AMPERES)
HALF-BRIDGE SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1800
1600
1400
1200
1000
800
V_CC = 900V
V_GE = ±15V
R_G(on) = 0.7Ω
R_G(off) = 1.7Ω
L_S = 100nH
Tj = 125°C
Inductive Load
600
400
200
0
0
E_on
E_off
500 1000 1500 2000 2500 3000
COLLECTOR CURRENT, I_C, (AMPERES)
REVERSE RECOVERY SWITCHING
ENERGY VS. GATE RESISTANCE
CHARACTERISTICS (TYPICAL)
800
8000
V_CC = 900V
700
V_GE = ±15V
7000
600
I_C = 1800A
L_S = 100nH
6000
500
Tj = 125°C
5000
dv/dt_(off) = 20-80%
400
Inductive Load
4000
300
3000
200
2000
100
1000
0
0
0
1
2
3
4
5
GATE RESISTANCE, R_G, (Ω)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10⁴
10³
C_ies
10²
10¹ _{VGE = 0V}
f = 100kHz
C_oes
C_res
T_j = 25°C
10⁰
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
HALF-BRIDGE SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
4000
3500
3000
2500
2000
V_CC = 900V
V_GE = ±15V
I_C = 1800A
L_S = 100nH
Tj = 125°C
dv/dt_(off) = 20-80%
Inductive Load
4000
3500
3000
2500
2000
1500
1500
1000
1000
500
0
0
E_{on 500}
E_off
0
1
2
3
4
5
GATE RESISTANCE, R_G, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
SINGLE PULSE
1.0
T_C = 25°C
IGBT = R_th(j-c)Q =
9°K/kW
0.8 _{FWDI = Rth(j-c)D =}
13°K/kW
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
10¹
TIME, (s)
4
12/08