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CM1800HCB-34N Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (VGE = 0V)
Gate-Emitter Voltage (VCE = 0V)
Collector Current (DC, Tc = 80°C)
Peak Collector Current (Pulse)
Diode Forward Current** (Tc = 25°C)
Diode Forward Surge Current** (Pulse)
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj ≤ 150°C)
Max. Mounting Torque M8 Terminal Screws
Tj
Tstg
Top
VCES
VGES
IC
ICM
IE
IEM
PC
–
Max. Mounting Torque M6 Mounting Screws
–
Max. Mounting Torque M4 Auxiliary Terminal Screws
–
Max. Turn-off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C)
–
Short-circuit Capability, Max. Pulse Width (VCC ≤ 1000V, VGE = ±15V, Tj = 125°C)
–
Max. Reverse Recovery Instantaneous Power**
–
(VCC ≤ 1200V, diE/dt ≤ t.b.d A/μs, Tj = 125°C)
Module Weight (Typical)
–
V Isolation (Charged Part to Baseplate, AC 60Hz 1 min.)
Viso
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Top(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V, Tj = 25°C
VCE = VCES, VGE = 0V, Tj = 125°C
Gate-Emitter Threshold Voltage
VGE(th)
IC = 180mA, VCE = 10V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 1800A*, VGE = 15V, Tj = 25°C
IC = 1800A*, VGE = 15V, Tj = 125°C
Total Gate Charge
QG
VCC = 900V, IC = 1800A, VGE = 15V
Emitter-Collector Voltage**
VEC
IE = 1800A*, VGE = 0V, Tj = 25°C
IE = 1800A*, VGE = 0V, Tj = 125°C
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM1800HCB-34N
-40 to 150
-40 to 125
-40 to 125
1700
±20
1800
3600*
1800
3600*
13800
115
53
17
3600
10
540
1.5
4000
Units
°C
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Amperes
μs
kW
kg
Volts
Min.
Typ.
Max. Units
–
–
8.0
mA
–
–
16.0
mA
5.0
6.0
7.0
Volts
–
–
0.5
μA
–
2.0
–
Volts
–
2.2
–
Volts
–
13.6
–
μC
–
2.35
–
Volts
–
1.85
–
Volts
2
12/08
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