CM1800HCB-34N Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1800HCB-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
V_CE = 10V , V_GE = 0V,
Output Capacitance
C_oes
f = 100 kHz
Reverse Transfer Capacitance
C_res
V_CE = 10V , V_GE = 0V, f = 1 MHz
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 900V, I_C = 1800A,
Load
Rise Time
t_r
V_GE1 = -V_GE2 = 15V,
Turn-on Switching Energy E_on
R_G(on) = 0.7Ω, T_j = 125°C
Switching
Turn-off Delay Time
t_d(off)
V_CC = 900V, I_C = 1800A,
Times
Fall Time
t_f
V_GE1 = -V_GE2 = 15V,
Turn-off Switching Energy E_off
R_G(off) = 1.3Ω, T_j = 125°C
Diode Reverse Recovery Time*
t_rr
V_CC = 900V, I_E = 1800A,
Diode Reverse Recovery Charge*
Q_rr
di_E/dt = -7000A/μs,
Reverse Recovery Energy*
E_rec
* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
T_j = 125°C
Min.
Typ.
Max. Units
–
352
–
nF
–
19.2
–
nF
–
5.6
–
nF
–
0.95
–
μs
–
0.30
–
μs
–
390
–
mJ/P
–
1.60
–
μs
–
0.25
–
μs
–
770
–
mJ/P
–
1.20
–
μs
–
900
–
μC
–
480
–
mJ/P
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
R_th(j-c) Q
Per IGBT
–
–
9.0
K/kW
Thermal Resistance, Junction to Case
R_th(j-c) D
Per FWDi
–
–
13.0 K/kW
Contact Thermal Resistance, Case to Fin
R_th(c-f)
Per Module, Thermal Grease Applied
–
7.0
–
K/kW
Comparative Tracking Index
CTI
–
600
–
–
–
Clearance
–
–
19.5
–
–
mm
Internal Inductance
Internal Lead Resistance
L_C-E(int)
R_C-E(int)
IGBT Part
IGBT Part
–
10.0
–
nH
–
0.16
–
mΩ
12/08
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