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CM150DC-24NFM Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Dual IGBT NFM-Series Module 150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM150DC-24NFM
Dual IGBT NFM-Series Module
150 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 600V
VGE = ±15V
RG = 2.0Ω
Tj = 125°C
Inductive Load
102
102
GATE CHARGE VS. VGE
20
IC = 150A
15
VCC = 400V
VCC = 600V
10
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
102
VCC = 600V
VGE = ±15V
RG = 2.0Ω
Tj = 125°C
Inductive Load
Eon
101
Eoff
101
101
102
EMITTER CURRENT, IE, (AMPERES)
Irr
trr 101
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
101
5
0
0 200 400 600 800 1000
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
102
VCC = 600V
VGE = ±15V
RG = 2.0Ω
Tj = 125°C
Inductive Load
101
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
VCC = 600V
VGE = ±15V
IC = 150A
Tj = 125°C
Inductive Load
101
100
100
101
GATE RESISTANCE, RG, (Ω)
Eon
Eoff
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
100
100
101
102
GATE RESISTANCE, RG, (Ω)
10-1
10-2
10-3
Single Pulse
TC = 25°C
Under the Chip
Per Unit Base =
Rth(j-c) =
0.13°C/W
(IGBT)
Rth(j-c) =
0.28°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3

02/07