CM150DC-24NFM Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Dual IGBT NFM-Series Module 150 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM150DC-24NFM
Dual IGBT NFM-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current
Peak Collector Current
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation*** (TC = 25°C)****
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
—
—
—
VISO
CM150DC-24NFM
–40 to 150
–40 to 125
1200
±20
150
300*
150
300*
960
40
40
375
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 15mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage*****
VCE(sat)
IC = 150A, VGE = 15V, Tj = 25°C
—
3.0
4.5
Volts

IC = 150A, VGE = 15V, Tj = 125°C
—
3.0
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 150A, VGE = 15V
—
680
—
nC
Emitter-Collector Voltage**
VEC
IE = 150A, VGE = 0V
—
2.3
3.3
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
—
Output Capacitance*****
Coes
VCE = 10V, VGE = 0V
—
Reverse Transfer Capacitance
Cres
—
Inductive
Turn-on Delay Time
td(on)
—
Load
Rise Time
tr
VCC = 600V, IC = 150A,
—
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 2.1Ω,
—
Time
Fall Time
tf
Inductive Load
—
Diode Reverse Recovery Time**
trr
Switching Operation,
—
Diode Reverse Recovery Charge**
Qrr
IE = 150A
—
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***Junction temperature (Tj) should not increase beyond 150°C.
****TC , Tf measured point is just under the chips.
*****Pulse width and repetition rate should be such as to cause neglible temperature rise.
—
24
nF
—
2.0 nF
—
0.45 nF
—
150
ns
—
80
ns
—
400
ns
60
200
ns
80
130
ns
7.0
—
µC

02/07