CM150DC-24NFM Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBT NFM-Series Module 150 Amperes/1200 Volts

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CM150DC-24NFM
Dual IGBT NFM-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module,
—

TC Measured Point Just Under Chips
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module,
—

TC Measured Point Just Under Chips
Contact Thermal Resistance,
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
Case to Fin
—
0.13 °C/W
—
0.28 °C/W
0.02
—
°C/W
External Gate Resistance
RG
2.1
—
21
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
300
V_GE = 20V
15
T_j = 25°C
250
13
12
200
150
10
100
9
50
8
0
0
2
4
6
8 10
COLLECTOR CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
V_GE = 0V
T_j = 25°C
T_j = 125°C
10²
10¹
10⁰
0
1
2
3
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 50 100 150 200 250 300
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 300A
I_C = 150A
6
I_C = 60A
4
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_f
10²
t_d(on)
10¹
10⁰
10¹
V_CC = 600V
t_r
V_GE = ±15V
R_G = 2.0Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
02/07