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| CM100DU-24NFH Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI IGBT MODULES | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100DU-24NFH
Dual IGBTMOD⢠NFH-Series Module
100 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
td(off)
102
101
100
101
101
td(on)
tf
tr
VCC = 600V
VGE = 15V
RG = 3.1â¦
Tj = 125°C
Inductive Load
102
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
100
10-1
101
VCC = 600V
VGE = 15V
RG = 3.1â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 600V
VGE = ±15V
IE = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
Err
100
100
101
102
GATE RESISTANCE, RG, (â¦)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 600V
VGE = 15V
RG = 3.1â¦
Tj = 25°C
Inductive Load
102
102
GATE CHARGE VS. VGE
20
IC = 100A
16
VCC = 400V
12
VCC = 600V
8
101
101
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
102
VCC = 600V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
ESW(on)
ESW(off)
101
103
100
100
101
102
GATE RESISTANCE, RG, (â¦)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
4
0
0 100 200 300 400 500 600 700
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
102
101
100
101
Err
VCC = 600V
VGE = ±15V
RG = 3.1â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
102
EMITTER CURRENT, IE, (AMPERES)
103
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.22°C/W
(IGBT)
Rth(j-c) =
0.47°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
Rev. 11/09
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