CM100DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI IGBT MODULES

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CM100DU-24NFH
Dual IGBTMOD™ NFH-Series Module
100 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Rth(j-c)'D Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
RG
3.1
Typ.
—
—
—
—
0.07
—
Max.
0.22
Units
°C/W
0.47 °C/W
0.17 °C/W
0.29 °C/W
—
°C/W
31
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
200
T_j = 25°C
V_GE = 20V
14
15
13
150
12
100
11
10
50
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 200A
6
I_C = 100A
4
I_C = 40A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
V_GE = 10V
T_j = 25°C
150
T_j = 125°C
100
50
0
0
10³
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T_j = 25°C
T_j = 125°C
10²
10¹
01
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
V_GE = 15V
T_j = 25°C
7
T_j = 125°C
6
5
4
3
2
1
0
0
50
100
150
200
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
V_GE = 0V
10¹
C_ies
10⁰
C_oes
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
Rev. 11/09
3