CM100DU-24NFH Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI IGBT MODULES

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CM100DU-24NFH
Dual IGBTMOD™ NFH-Series Module
100 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
PC
PC
—
—
—
VISO
CM100DU-24NF
–40 to 150
–40 to 125
1200
±20
100*
200*
100*
200*
560
730
30
40
310
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C
—
5.0
6.5
Volts
IC = 100A, VGE = 15V, Tj = 125°C
—
5.0
—
Volts
Total Gate Charge
QG
VCC = 600V, IC = 100A, VGE = 15V
—
450
—
nC
Emitter-Collector Voltage**
VEC
IE = 100A, VGE = 0V
—
—
3.5
Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Cies
—
—
16
nf
Output Capacitance
Coes
VCE = 10V, VGE = 0V
—
—
1.3
nf
Reverse Transfer Capacitance
Cres
—
—
0.3
nf
Inductive
Turn-on Delay Time
td(on)
—
—
100
ns
Load
Rise Time
tr
VCC = 600V, IC = 100A,
—
—
50
ns
Switch
Turn-off Delay Time
td(off)
VGE1 = VGE2 = 15V, RG = 3.1Ω,
—
—
250
ns
Time
Fall Time
tf
Inductive Load Switching Operation,
—
—
150
ns
Diode Reverse Recovery Time**
trr
IE = 100A
—
—
150
ns
Diode Reverse Recovery Charge**
Qrr
—
5.0
—
µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Rev. 11/09