BCR8CM Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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BCR8CM
Triac
8 Amperes/400-600 Volts
Electrical and Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction-to-case
Voltage – Blocking State
Repetitive Off-state Current
Current – Conducting State
Peak On-state Voltage
Critical Rate-of-rise of Commutating
Off-state Voltage (Commutating dv/dt)
v for inductive load (L)
(Switching)
R_th(j-c)
I_DRM
V_TM
(dv/dt)_c
–
Gate Open Circuited,
V_D = V_DRM, T_j = 125°C
T_c = 25°C, Instantaneous
I_TM = 12A
–
Min.
Typ. Max. Units
–
–
2
°C/W
–
–
2
mA
–
–
1.5 Volts
–
–
–
V/␮s
⌬ Part
Number
V_DRM
(Volts)
Commutating
dv/dt, (dv/dt)_c
(V/␮sec)
Minimum
Test Condition
BCR8CM-8L 400
BCR8CM-12L 600
10
T_j = 125°C,
10
Rate of Decay
On-state
Commutating Current
(di/dt)_c = -4A/msec:
Peak Off-state
Voltage
V_D = 400V
Commutating Voltage &
Current Waveform
(Inductive Load)
SUPPLY
VOLTAGE
MAIN
CURRENT
t
(di/dt)_C
t
MAIN
VOLTAGE
(dv /dt)_C
V_D
t
V_D
T-36