BCR8CM Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
BCR8CM
Triac
8 Amperes/400-600 Volts
Absolute Maximum Ratings, T_a = 25 °C unless otherwise specified
Ratingss
Symbol
Repetitive Peak Off-state Voltage
Non-repetitive Peak Off-state Voltage
On-state Current, T_c = 105°C
Non-repetitive Peak Surge, One Cycle (60 Hz)
I²t for Fusing, t = 8.3 msec
V_DRM
V_DSM
I_T(RMS)
I_TSM
I²t
Peak Gate Power Dissipation, 20 ␮sec
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Storage Temperature
Operating Temperature
Weight
P_GM
P_G(avg)
I_GM
V_GM
T_stg
T_j
–
x_{At the case reference point (see outline drawing)}
temperature of 105°C maximum and 360°
conduction.
BCR8CM-8
400
500
8
80
26
5
0.5
2
10
-40 to 125
-40 to 125
2.3
BCR8CM-12
600
720
8
80
26
5
0.5
2
10
-40 to 125
-40 to 125
2.3
Units
Volts
Volts
Amperes
Amperes
A²sec
Watts
Watts
Amperes
Volts
°C
°C
Grams
T-34