BCR8CM Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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BCR8CM
Triac
8 Amperes/400-600 Volts
Electrical and Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Gate Parameters
DC Gate Trigger Current
Symbol
Test Conditions (Trigger Mode)
V_D
R_L
R_G
T_j
MT2+ Gate+
6V
6⍀
330⍀ 25°C
MT2+ Gate–
MT2– Gate–
I_GT
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
DC Gate Trigger Voltage
MT2+ Gate+
6V
6⍀
330⍀ 25°C
MT2+ Gate–
MT2– Gate–
V_GT
6V
6⍀
330⍀ 25°C
6V
6⍀
330⍀ 25°C
DC Gate Non-trigger Voltage
All
V_GD
1/2 V_DRM –
–
125°C
BCR8CM
Min.
Typ. Max.
Units
–
–
–
–
–
–
–
–
–
–
–
–
0.2
–
30
mA
30
mA
30
mA
1.5 Volts
1.5 Volts
1.5 Volts
–
Volts
T-35