CM450DXL-34SA Datasheet, PDF (3/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 450 Amperes/1700 Volts

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CM450DXL-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V
Gate-Emitter Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 45mA, V_CE = 10V
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 450A, V_GE = 15V, T_j = 25°C^*5
(Terminal)
I_C = 450A, V_GE = 15V, T_j = 125°C^*5
I_C = 450A, V_GE = 15V, T_j = 150°C^*5
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 450A, V_GE = 15V, T_j = 25°C^*5
(Chip)
I_C = 450A, V_GE = 15V, T_j = 125°C^*5
I_C = 450A, V_GE = 15V, T_j = 150°C^*5
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Gate Charge
Q_G
V_CC = 1000V, I_C = 450A, V_GE = 15V
Turn-on Delay Time
t_d(on)
Rise Time
t_r
V_CC = 1000V, I_C = 450A, V_GE = ±15V,
Turn-off Delay Time
t_d(off)
R_G = 0Ω, Inductive Load
Fall Time
t_f
Emitter-Collector Voltage
V_EC^*1
I_E = 450A, V_GE = 0V, T_j = 25°C^*5
(Terminal)
I_E = 450A, V_GE = 0V, T_j = 125°C^*5
I_E = 450A, V_GE = 0V, T_j = 150°C^*5
Emitter-Collector Voltage
V_EC^*1
I_E = 450A, V_GE = 0V, T_j = 25°C^*5
(Chip)
I_E = 450A, V_GE = 0V, T_j = 125°C^*5
I_E = 450A, V_GE = 0V, T_j = 150°C^*5
Reverse Recovery Time
t_rr^*1
V_CC = 1000V, I_E = 450A, V_GE = ±15V
Reverse Recovery Charge
Q_rr^*1
R_G = 0Ω, Inductive Load
Turn-on Switching Energy per Pulse
E_on
V_CC = 1000V, I_C = I_E = 450A, V_GE = ±15V
Turn-off Switching Energy per Pulse
E_off
R_G = 0Ω, T_j = 150°C
Reverse Recovery Energy per Pulse
E_rr^*1
Inductive Load
Internal Lead Resistance
R_{CC' + EE'}
Main Terminals-Chip,
Per Switch,T_C = 25°C^*4
Internal Gate Resistance
r_g
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
0
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
18.5
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
29.5
30.5
43.6
44.6
70.8
84.9
Min.
Typ.
—
—
—
—
5.4
6.0
—
2.0
—
2.2
—
2.25
—
1.9
—
2.1
—
2.15
—
—
—
—
—
—
—
2480
—
—
—
—
—
—
—
—
—
4.1
—
2.9
—
2.7
—
4.0
—
2.8
—
2.6
—
—
—
17
—
147
—
129
—
73
—
—
—
3.2
Th
Tr1
Tr1
Tr1
Di1 Di1
Di1
Tr2
Tr2 Tr2
Di2
Di2 Di2
Max.
1.0
0.5
6.6
2.5
—
—
2.4
—
—
119
9.8
2.2
—
900
150
900
400
5.3
—
—
5.2
—
—
300
—
—
—
—
0.6
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
—
Ω
0
27.0
41.1
70.2
84.3
06/13 Rev. 1
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
3