CM450DXL-34SA Datasheet, PDF (2/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 450 Amperes/1700 Volts

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CM450DXL-34SA
Dual IGBT NX-Series Module
450 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 125°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2
Emitter Current (Pulse, Repetitive)^*3
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Maximum Case Temperature^*4
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
0
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
18.5
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
29.5
(mounting side) of the baseplate and the heatsink side just under the chips.
30.5
Refer to the figure to the right for chip location.
43.6
44.6
The heatsink thermal resistance should be measured just under the chips.
70.8
84.9
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
V_ISO
T_j(max)
T_C(max)
T_j(op)
T_stg
Rating
1700
±20
450
900
4410
450
900
4000
175
125
-40 to +150
-40 to +125
Th
Tr1
Tr1
Tr1
Di1 Di1
Di1
Tr2
Tr2 Tr2
Di2
Di2 Di2
0
27.0
41.1
70.2
84.3
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Volts
°C
°C
°C
°C
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
06/13 Rev. 1