CM300E3Y6-24NFH Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Chopper IGBTMOD NFH-Series Module 300 Amperes/1200 Volts

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CM300E3Y6-24NFH
Chopper IGBTMOD™ NFH-Series Module
300 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Inverter IGBT/FWDi Part
Characteristics
Symbol
Test Conditions
Min.
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Internal Lead Resistance
I_CES
V_CE = V_CES, V_GE = 0V
—
I_GES
±V_GE = V_GES, V_CE = 0V
—
V_GE(th)
I_C = 30mA, V_CE = 10V
4.5
V_CE(sat)
I_C = 300A, V_GE = 15V, T_j = 25°C^*4
—
I_C = 300A, V_GE = 15V, T_j = 125°C^*4
—
C_ies
—
C_oes
V_CE = 10V, V_GE = 0V
—
C_res
—
Q_G
V_CC = 600V, I_C = 300A, V_GE = 15V
—
t_d(on)
—
t_r
V_CC = 600V, I_C = 300A, V_GE = ±15V,
—
t_d(off)
R_G = 1.0Ω, Inductive Load
—
t_f
—
V_EC^*1
I_E = 50A, V_GE = 0V^*4
—
R_{CC' + EE'}
I_C = 300A, T_C = 25°C,
—
Chip - Terminals
Internal Gate Resistance
External Gate Resistance
r_g
T_C = 25°C
—
R_G
1.0
Clamp Diode Part
Collector Cutoff Current
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage
Internal Lead Resistance
I_RRM
V_R = V_RRM
—
t_rr
V_CC = 600V, I_F = 300A, V_GE = ±15V,
—
Q_rr
R_G = 1.0Ω, Inductive Load
—
V_FM
I_F = 300A^*4
—
R_{CC' + EE'}
I_F = 300A, T_C = 25°C,
—
Chip - Terminals
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Typ.
—
—
6.0
5.0
5.0
—
—
—
1350
—
—
—
—
2.8
0.53
0.8
—
—
—
6.0
5.5
0.53
Max.
1
1
7.5
6.5
—
47
4.0
0.9
—
300
80
500
150
3.8
—
—
10
1
100
—
7.0
—
Units
mA
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
mΩ
Ω
Ω
mA
ns
µC
Volts
mΩ
12/11 Rev. 0
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