CM300E3Y6-24NFH Datasheet, PDF (2/4 Pages) Powerex Power Semiconductors – Chopper IGBTMOD NFH-Series Module 300 Amperes/1200 Volts

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CM300E3Y6-24NFH
Chopper IGBTMOD™ NFH-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Inverter IGBT/FWDi Part
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (Operation, T_C = 25°C)^*3
Collector Current (Pulse, Repetitive)^*2
Total Power Dissipation (T_C = 25°C)^*2,*3
Emitter Current (Operation, T_C = 25°C)^*3
Emitter Current (Pulse, Repetitive)^*2
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
Rating
1200
±20
300
600
1760
50
100
Clamp Diode Part
Characteristics
Repetitive Peak Reverse Voltage
Forward Current (Operation, T_C = 25°C)^*3
Forward Current (Pulse, Repetitive)^*2
Symbol
V_RRM
I_F
I_FRM
Rating
1200
300
600
Module
Characteristics
Symbol
Rating
Isolation Voltage (Charged Part to Baseplate, f= 60 Hz, AC 1 Minute)
Maximum Junction Temperature
Operating Junction Temperature
Storage Temperature
V_ISO
T_j(max)
T_j(op)
T_stg
2500
+150
-40 to +150
-40 to +125
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_j(max) rating.
*3 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.
0
60.1
0
0
18.4
32.2
34.4
Th
Di1
Tr2
Tr2
Di2
Di1
24.4
34.5
0
31.8 42.2 52.4
76.7
LABEL SIDE
Each mark points to the center position of each chip.
Tr2: IGBT Di2: FWDi
Di1: ClampDi Th: NTC Thermistor
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Units
Volts
Amperes
Amperes
Units
V_rms
°C
°C
°C
2
12/11 Rev. 0