CM200TU-5F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes/250 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
400
10
V_GE = 15V
86
5.75
T_j = 25^oC
300
5.5
200
5.25
100
5
4.75
4.5
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
3
I_C = 400A
2
I_C = 200A
1
I_C = 80A
0
0
5
10
15
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_CE = 10V
T_j = 25°C
300
T_j = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.0
V_GE = 10V
T_j = 25°C
1.5
T_j = 125°C
200
1.0
100
0.5
0
0
2
4
6
8
10
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
0.6 0.8 1.0 1.2 1.4 1.6 1.8
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
di/dt = -400A/µsec
T_j = 25°C
t_rr
10²
10²
0
0 80 160 240 320 400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 200A
15
V_CC = 50V
V_CC = 100V
10
I_rr
5
10¹
10¹
10¹
10²
10³
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
0
0
0.5
1.0
1.5
2.0
GATE CHARGE, Q_G, (␮C)
3