CM200TU-5F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200TU-5F
Trench Gate Design
Six IGBTMOD™
200 Amperes/250 Volts
G
EH
A
B
F
EH
G
ES
R 4 - Mounting
Holes
K
D
C
GuP
EuP
T_C
Measured
Point
GvP
EvP ^GwP
EwP
GuN
EuN
GvN
EvN
u
v
w
L
T_C
Measured _M
Point
GwN
EwN
5 - M5 NUTS
EHE H E
J
J
N
K
0.110 - 0.5 Tab
P
Q
P
GuP
EuP
U
GvP
GwP
EvP
EwP
V
W
GuN
EuN
N
GvN
EvN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
4.21
3.54±0.01
4.02
3.15±0.01
0.43
0.91
0.47
0.85
0.91
Millimeters
107.0
90.0±0.25
102.0
80.0±0.25
11.0
23.0
12.0
21.7
23.0
GwN
EwN
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.15
0.67
1.91
0.03
0.32
1.02
0.22 Dia.
0.57
Millimeters
3.75
17.0
48.5
0.8
8.1
26.0
5.5 Dia.
14.4
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V_CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200TU-5F is a
250V (V_CES), 200 Ampere Six-
IGBT IGBTMOD™ Power Module.
Current Rating
V_CES
Type
Amperes
Volts (x 50)
CM
200
5
1