CM200TU-5F Datasheet, PDF (2/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes/250 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T_c = 25°C)
Peak Collector Current (T_j ≤ 150°C)
Emitter Current**
Peak Emitter Current**
Maximum Collector Dissipation (T_j < 150°C)
Mounting Torque, M5 Main Terminal
T_j
T_stg
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
–
Mounting Torque, M5 Mounting
–
Weight
–
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V_iso
CM200TU-5F
-40 to 150
-40 to 125
250
±20
200
400*
200
400*
600
31
31
680
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
I_CES
V_CE = V_CES, V_GE = 0V
–
I_GES
V_GE = V_CES, V_CE = 0V
–
V_GE(th)
I_C = 20mA, V_CE = 10V
3.0
V_CE(sat)
I_C = 200A, V_GE = 10V, T_j = 25°C
–
I_C = 200A, V_GE = 10V, T_j = 125°C
–
Total Gate Charge
Q_G
V_CC = 100V, I_C = 200A, V_GE = 10V
–
Emitter-Collector Voltage**
V_EC
I_E = 200A, V_GE = 0V
–
Typ.
Max. Units
–
1
mA
–
0.5
µA
4.0
5.0
Volts
1.2
1.7
Volts
1.1
–
Volts
–
nC
–
2.0
Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
C_ies
Output Capacitance
C_oes
V_CE = 10V, V_GE = 0V
Reverse Transfer Capacitance
C_res
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 100V, I_C = 200A,
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
t_r
t_d(off)
t_f
t_rr
Q_rr
V_GE1 = V_GE2 = 10V,
R_G = 13⍀, Resistive
Load Switching Operation
I_E = 200A, di_E/dt = -400A/µs
I_E = 200A, di_E/dt = -400A/µs
Min.
Typ.
Max. Units
–
–
66
nf
–
–
3.0
nf
–
–
2.3
nf
–
–
700
ns
–
– 1800
ns
–
–
700
ns
–
–
500
ns
–
–
300
ns
–
–
µC
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)Q
Per IGBT 1/6 Module
–
R_th(j-c)R
Per Free-Wheel Diode 1/6 Module
–
R_th(c-f)
Per Module, Thermal Grease Applied
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
–
–
0.09
Max.
0.21
0.47
–
Units
°C/W
°C/W
°C/W
2