PSM03S93E5-A Datasheet, PDF (2/11 Pages) Mitsubishi Electric Semiconductor – Dual-In-Line Package Intelligent Power Module

< Dual-In-Line Package Intelligent Power Module >
PSM03S93E5-A
TRANSFER MOLDING TYPE
INSULATED TYPE
MAXIMUM RATINGS (Tch = 25°C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Condition
Ratings
Unit
VDD
Supply voltage
Applied between P-NU,NV,NW
400
V
VDD(surge) Supply voltage (surge)
Applied between P-NU,NV,NW
450
V
VDSS
Drain-source voltage
500
V
±ID
Each MOSFET drain current
TC= 25°C
3
A
±IDP
Each MOSFET drain current (peak) TC= 25°C, less than 1ms
6
A
PD
Drain dissipation
TC= 25°C, per 1 chip
29.4
W
Tch
Channel temperature
(Note 1)
-20~+150
°C
Note1: The maximum junction temperature rating of built-in power chips is 150°C(@Tc≤100°C).However, to ensure safe operation of DIPIPM, the average
channel temperature should be limited to Tch(Ave)≤125°C (@Tc≤100°C).
CONTROL (PROTECTION) PART
Symbol
Parameter
VD
Control supply voltage
VDB
Control supply voltage
VIN
Input voltage
VFO
Fault output supply voltage
IFO
Fault output current
VSC
Current sensing input voltage
Condition
Applied between VP1-VNC, VN1-VNC
Applied between VUFB-U, VVFB-V, VWFB-W
Applied between UP, VP, WP-VPC, UN, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-VNC
Ratings
Unit
20
V
20
V
-0.5~VD+0.5
V
-0.5~VD+0.5
V
1
mA
-0.5~VD+0.5
V
TOTAL SYSTEM
Symbol
Parameter
Condition
Ratings
Unit
VDD(PROT)
TC
Self protection supply voltage limit
(Short circuit protection capability)
Module case operation temperature
VD = 13.5~16.5V, Inverter Part
Tch = 125°C, non-repetitive, less than 2μs
Measurement point of Tc is provided in Fig.1
400
V
-20~+100
°C
Tstg
Storage temperature
Viso
Isolation voltage
-40~+125
°C
60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate
1500
Vrms
Fig. 1: TC MEASUREMENT POINT
Control terminals
DIPIPM
11.6mm
3mm
IGBT chip position
Power terminals
Tc point
Heat sink side
THERMAL RESISTANCE
Symbol
Parameter
Condition
Min.
Limits
Typ.
Max.
Unit
Rth(ch-c)Q Junction to case thermal resistance (Note2)
1/6 module
-
-
3.4 K/W
Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
Publication Date : October 2013
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