ARF370 Datasheet, PDF (4/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ARF370 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 04
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC
Tj = 150 °C
1600
1400
1200
1000
800
600
400
200
0
1.5
2.5
3.5
4.5
Forward Voltage [V]
SURGE CHARACTERISTIC
Tj = 150 °C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1
10
100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0.001 0.01
0.1
1
t[s]
10
100
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and
roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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