ARF370 Datasheet, PDF (1/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
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FAST RECOVERY DIODE
FINAL SPECIFICATION
feb 97 - ISSUE : 04
ARF370
Repetitive voltage up to
Mean forward current
Surge current
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
Conditions
V=VRRM
CONDUCTING
I F (AV)
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
Forward current = 1200 A
SWITCHING
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
V FR
Peak forward recovery
I F = 1000 A
di/dt= 100 A/µs
VR = 100 V
di/dt= 400 A/µs
MOUNTING
R th(j-h)
Thermal impedance
Tj
Operating junction temperature
F
Mounting force
Mass
Junction to heatsink, double side cooled
ORDERING INFORMATION : ARF370 S 45
standard specification
VRRM/100
4500 V
485 A
4 kA
Tj
[°C]
Value
Unit
150 4500
V
150 4600
V
150
50
mA
485
A
490
A
150
4
kA
80 x1E3 A²s
25
3.4
V
150 1.74
V
150 1.700
mohm
5
µs
150 700
µC
280
A
0.5
150
80
V
52
-30 / 150
8.4 / 9.4
280
°C/kW
°C
kN
g