ARF370 Datasheet, PDF (3/4 Pages) Power Semiconductors – FAST RECOVERY DIODE

ARF370 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 04
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SWITCHING CHARACTERISTICS
180
160
140
120
100
80
60
40
20
0
0
FORWARD RECOVERY VOLTAGE
Tj 150 °C
Tj = 25 °C
200 400 600 800 1000 1200
di/dt [A/µs]
IF
VFR
VF
1400
1200
REVERSE RECOVERY CHARGE - Tj = 150°
1000 A
1000
800
500 A
600
250 A
400
200
0
0
100
200
300
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT - Tj = 150°
800
700
1000 A
600
500 A
500
250 A
400
300
200
100
0
0
100
200
300
400
di/dt [A/µs]
ta = Irr / (di/dt) tb = trr - ta
IF
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
d i/d t
ta tb
25% di Irr
Irr
Vr