TICP206 Datasheet, PDF (2/7 Pages) Power Innovations Ltd – SILICON TRIACS

TICP206 SERIES
SILICON TRIACS
MARCH 1988 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Peak on-state
V_TM
voltage
I_TM = ±1 A
I_G = 50 mA
(see Note 6)
±2.2
V
I_H
Holding current
V_supply = +12 V†
V_supply = -12 V†
I_G = 0
I_G = 0
I_L
Latching current
V_supply = +12 V†
V_supply = -12 V†
(see Note 7)
Init’ I_TM = 100 mA
Init’ I_TM = -100 mA
30
mA
-30
40
mA
-40
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t_p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the following characteristics:
R_G = 100 Ω, t_p(g) = 20 µs, t_r = ≤ 15 ns, f = 1 kHz.
TYPICAL CHARACTERISTICS
1000
100
GATE TRIGGER CURRENT
vs
TEMPERATURE
TC05AA
V_supply I_GTM
++
+-
--
-+
V_AA = ± 12 V
R_L = 10 Ω
t_p(g) = 20 µs
GATE TRIGGER VOLTAGE
vs
TEMPERATURE
TC05AB
10
V_supply I_GTM
+
+
+
-
}
-
-
-
+
}
V_AA = ± 12 V
R_L = 10 Ω
t_p(g) = 20 µs
10
1
1
0·1
-60 -40 -20 0 20 40 60 80 100 120
T_C - Case Temperature - °C
Figure 1.
0·1
-60 -40 -20 0 20 40 60 80 100 120
T_C - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
2