TICP206 Datasheet, PDF (1/7 Pages) Power Innovations Ltd – SILICON TRIACS

Copyright © 1997, Power Innovations Limited, UK
TICP206 SERIES
SILICON TRIACS
MARCH 1988 - REVISED MARCH 1997
q 1.5 A RMS
q Glass Passivated Wafer
q 400 V to 600 V Off-State Voltage
q Max I_GT of 10 mA
G
MT2
MT1
LP PACKAGE
(TOP VIEW)
1
2
3
q Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
MDC2AA
1
MT2
2
3
MT1
MDC2AB
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
TICP206D
TICP206M
SYMBOL
V_DRM
I_T(RMS)
I_TSM
I_TSM
I_GM
P_G(AV)
T_C
T_stg
T_L
VALUE
400
600
1.5
10
12
±0.2
0.3
-40 to +110
-40 to +125
230
UNIT
V
A
A
A
A
W
°C
°C
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 60 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I_DRM
Repetitive peak off-
state current
V_D = rated V_DRM
I_GTM
V_GTM
Peak gate trigger
current
Peak gate trigger
voltage
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
† All voltages are with respect to Main Terminal 1.
TEST CONDITIONS
I_G = 0
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
MIN TYP MAX UNIT
±20
µA
8
-8
mA
-8
10
2.5
-2.5
V
-2.5
2.5
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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