TDA8580 Datasheet, PDF (9/20 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
P_o
output power
THD = 0.5%; V_P = 14.4 V;
4
4.2
R_L = 4 Ω
THD = 0.5%; V_P = 24 V;
R_L = 4 Ω
11.5
13
THD = 10%; V_P = 14.4 V;
−
5.5
R_L = 4 Ω
THD = 10%; V_P = 24 V;
R_L = 4 Ω
14
16
G_v
voltage gain
V_o(rms) = 3 V
25
26
α_cs
channel separation
P_o = 2 W; f_i = 1 kHz; R_L = 4 Ω 40
46
∆G_v
channel unbalance
−
−
V_offset(DC) DC output offset voltage
V_P = 14.4 V; ‘on’ condition
−
0
V_P = 14.4 V; ‘mute’ condition; −
10
R_L = 4 Ω
V_no
noise output voltage
R_s = 1 kΩ; V_P = 14.4 V; note 3 −
80
V_no(mute)
noise output voltage mute
note 3
−
0
V_o(mute)
output voltage mute
V_i(rms) = 1 V
−
3
SVRR
supply voltage ripple rejection f_i = 1 kHz; V_ripple(p-p) = 2 V, ‘on’ 45
−
or ‘mute’ condition; R_s = 0 Ω
Z_i
input impedance
46
60
CMRR
common mode rejection ratio V_i(rms) = 0.5 V; f_i = 1 kHz;
−
60
R_s = 0 Ω
−
W
−
W
−
W
−
W
27
dB
−
dB
1
dB
100
mV
20
mV
120
µV
20
µV
500
µV
−
dB
74
kΩ
−
dB
Notes to the characteristics
1. Hysteresis between rise and fall voltage when MSB pin is controlled with real voltage source (the hysteresis depends
on resistor connected to MSB pin).
2. At lower V_P the voltage at the STANDBY pin for ‘on’ condition will be adjusted automatically to maintain an
‘on’ condition at low battery voltage (down to 8 V) when using one-pin operation.
3. The noise output is measured in a bandwidth of 20 Hz to 20 kHz.
Table 1 Selection of ‘standby’, ‘mute’ and ‘on’.
VOLTAGE AT PIN 5
V₅ < 0.8 V
2 V < V₅ < 5.3 V
2 V < V₅ < 5.3 V
V₅ ≥ 8.0 V
VOLTAGE AT PIN 13
don’t care
V₁₃ < 1 V
3.5 V < V₁₃ < 5.3 V
don’t care
FUNCTION
‘standby’ (off)
‘mute’ (DC settled)
‘on’ (AC operating)
‘on’ (AC operating)
1998 Feb 25
9