TDA8580 Datasheet, PDF (7/20 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
R_{th j-c}
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
VALUE
40
1.5
UNIT
K/W
K/W
CHARACTERISTICS
V_P = 14.4 V; T_amb = 25 °C; f_i = 1 kHz; R_L = ∞; measured in test circuit of Fig.8; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply
V_P
I_q(tot)
I_stb
V_O
V_P(mute)
V_o
V_I
operating supply voltage
8.0
total quiescent current
−
standby current
−
DC output voltage
V_P = 14.4 V
−
low supply voltage mute
6.0
single-ended and bridge-tied V_P = 14.4 V; ‘mute’ condition; −
load output voltage
R_L = 4 Ω
DC input voltage
V_P = 14.4 V
−
STANDBY PIN (see Table 1)
V_5(stb)
voltage at STANDBY pin for
0
‘standby’ condition
V_hys(5)(stb) hysteresis voltage at
note 1
−
STANDBY pin for ‘standby’
condition
V_5(mute)
voltage at STANDBY pin for V₁₃ < 1 V
2.0
‘mute’ condition
V_5(on)
voltage at STANDBY pin for V₁₃ < 1 V; V_P > 9 V; note 2
8.0
‘on’ condition
14.4 28
V
120
140
mA
1
50
µA
7.0
−
V
7.0
8.0
V
−
20
mV
4.0
−
V
−
0.8
V
0.2
−
V
−
5.5
V
−
18
V
MUTE PIN (see Table 1)
V_13(mute)
voltage at MUTE pin for
‘mute’ condition
V_13(on)
voltage at MUTE pin for
‘on’ condition
V₅ = 5 V
V₅ = 5 V
0
−
3.5
−
1.0
V
5.5
V
Diagnostic; output buffer (open-collector); see Figs 4, 5, 6 and 7
V_OL
I_LI
CD
T_j(diag)
low level output voltage
leakage current
clip detector
junction temperature for high
temperature warning
I_sink = 1 mA
V_DIAG = 14.4 V
V_DIAG < 0.8 V
V_DIAG < 0.8 V
−
0.2
0.8
V
−
−
1
µA
tbf
2
tbf
%
−
145
−
°C
1998 Feb 25
7