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TDA8580 Datasheet, PDF (8/20 Pages) NXP Semiconductors – Multi-purpose power amplifier | |||
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Philips Semiconductors
Multi-purpose power ampliï¬er
Preliminary speciï¬cation
TDA8580
SYMBOL
PARAMETER
CONDITIONS
MIN.
Stereo BTL application (see Fig.8)
THD
total harmonic distortion
fi = 1 kHz; Po = 1 W; RL = 4 ⦠â
fi = 10 kHz; Po = 1 W;
â
RL = 4 â¦;
Filter: 22 Hz < f < 30 kHz
Po
Gv
αcs
âGv
Voffset(DC)
Vno
Vno(mute)
Vo(mute)
SVRR
fi = 1 kHz; Po = 1 W;
â
VP = 14.4 V; RL = 4 â¦
fi = 1 kHz; Po = 10 W;
â
VP = 24 V; RL = 8 â¦
output power
THD = 0.5%; VP = 14.4 V;
15
RL = 4 â¦
THD = 0.5%; VP = 24 V;
25
RL = 8 â¦
THD = 10%; VP = 14.4 V;
18
RL = 4 â¦
THD = 10%; VP = 24 V;
â
RL = 8 â¦
voltage gain
Vo(rms) = 3 V
31
channel separation
Po = 2 W; fi = 1 kHz; RL = 4 ⦠40
channel unbalance
â
DC output offset voltage
VP = 14.4 V; âonâ condition
â
VP = 14.4 V; âmuteâ condition; â
RL = 4 â¦
noise output voltage
Rs = 1 kâ¦; VP = 14.4 V; note 3 â
noise output voltage mute
note 3
â
output voltage mute
Vi(rms) = 1 V
â
supply voltage ripple rejection Rs = 0 â¦; fi = 1 kHz;
55
Vripple(p-p) = 2 V; âonâ or âmuteâ
condition
Zi
input impedance
23
CMRR
common mode rejection ratio Rs = 0 â¦; Vi(rms) = 0.5 V;
â
fi = 1 kHz
Quad SE application (see Fig.9)
THD
total harmonic distortion
fi = 1 kHz; Po = 1 W; RL = 4 ⦠â
fi = 10 kHz; Po = 1 W;
â
RL = 4 â¦;
Filter: 22 Hz < f < 30 kHz
TYP.
0.05
0.2
0.05
0.05
16
28
20
35
32
55
â
0
10
100
0
3
â
30
60
0.05
0.2
MAX. UNIT
0.1
%
â
%
â
%
â
%
â
W
â
W
â
W
â
W
33
dB
â
dB
1
dB
100
mV
20
mV
150
µV
20
µV
500
µV
â
dB
37
kâ¦
â
dB
0.1
%
â
%
1998 Feb 25
8
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