TDA8510J Datasheet, PDF (9/16 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE power amplifiers

Philips Semiconductors
26 W BTL and 2 × 13 W SE power
amplifiers
Preliminary specification
TDA8510J
AC CHARACTERISTICS
V_P = 15 V; f = 1 kHz; T_amb = 25 °C; measure in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
BTL channel
P_o
output power
note 1
THD = 0.5%
16
THD = 10%
22
THD
total harmonic distortion
P_o = 1 W
−
B
power bandwidth
THD = 0.5%;
−
f_ro(l)
f_ro(h)
G_v
SVRR
low frequency roll-off
P_o = −1 dB; with respect to 16 W
at −1 dB; note 2
−
high frequency roll-off
at −1 dB
20
closed loop voltage gain
25
supply voltage ripple rejection note 3
on
48
mute
46
standby
80
Z_i
input impedance
25
V_n(o)
noise output voltage
on; R_s = 0 Ω; note 4
−
on; R_s = 10 kΩ; note 4
−
mute; notes 4 and 5
−
α_cs
channel separation
R_s = 10 kΩ
40
DYNAMIC DISTORTION DETECTOR
THD
total harmonic distortion
V₁₆ ≤ 0.6 V; no short-circuit
−
TYP.
20
26
0.06
20 to
15 000
25
−
26
−
−
−
30
70
100
60
60
10
MAX. UNIT
−
W
−
W
−
%
−
Hz
−
Hz
−
kHz
27
dB
−
dB
−
dB
−
dB
38
kΩ
−
µV
200 µV
−
µV
−
dB
−
%
1999 Dec 14
9