TDA8510J Datasheet, PDF (2/16 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE power amplifiers

Philips Semiconductors
26 W BTL and 2 × 13 W SE power
amplifiers
Preliminary specification
TDA8510J
FEATURES
• Requires very few external components
• High output power
• Low output offset voltage (BTL channel)
• Fixed gain
• Diagnostic facility (distortion, short-circuit and
temperature detection)
• Good ripple rejection
• Mode select switch (operating, mute and standby)
• AC and DC short-circuit safe to ground and to V_P
• Low power dissipation in any short-circuit condition
• Thermally protected
• Reverse polarity safe
• Electrostatic discharge protection
• No switch-on/switch-off plop
• Flexible leads
• Low thermal resistance
• Identical inputs (inverting and non-inverting).
GENERAL DESCRIPTION
The TDA8510J is an integrated class-B output amplifier in
a 17-lead single-in-line (SIL) power package. It contains a
26 W Bridge-Tied Load (BTL) amplifier and 2 × 13 W
Single-Ended (SE) amplifiers.
The device is primarily developed for multi-media
applications and active speaker systems (stereo with
subwoofer).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
General
V_P
I_ORM
I_q(tot)
I_stb
supply voltage
repetitive peak output current
total quiescent current
standby current
BTL channel
P_o
SVRR
output power
supply voltage ripple rejection
V_n(o)
Z_i
∆V_OO
noise output voltage
input impedance
DC output offset voltage
Single-ended channels
P_o
output power
SVRR
V_n(o)
Z_i
supply voltage ripple rejection
noise output voltage
input impedance
CONDITIONS
MIN.
TYP. MAX. UNIT
6
−
−
−
R_L = 4 Ω; THD = 10% −
46
R_s = 0 Ω
−
25
−
THD = 10%
R_L = 4 Ω
−
R_L = 2 Ω
−
46
R_s = 0 Ω
−
50
15
18
V
−
4
A
80
−
mA
0.1
100
µA
26
−
W
−
−
dB
70
−
µV
−
−
kΩ
−
150
mV
7
−
W
13
−
W
−
−
dB
50
−
µV
−
−
kΩ
ORDERING INFORMATION
TYPE
NUMBER
TDA8510J
PACKAGE
NAME
DESCRIPTION
DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
VERSION
SOT243-1
1999 Dec 14
2