TDA8510J Datasheet, PDF (8/16 Pages) NXP Semiconductors – 26 W BTL and 2 x 13 W SE power amplifiers

Philips Semiconductors
26 W BTL and 2 × 13 W SE power
amplifiers
Preliminary specification
TDA8510J
DC CHARACTERISTICS
V_P = 15 V; T_amb = 25 °C; measured in Fig.7; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
Supply
V_P
I_q(tot)
V_O
∆V_OO
supply voltage
total quiescent current
DC output voltage
DC output offset voltage
Mode select switch
V_SW(on)
switch-on voltage level
MUTE CONDITION
V_mute
V_O
∆V_OO
mute voltage
output voltage in mute position
DC output offset voltage
STANDBY CONDITION
V_stb
I_stb
I_sw(on)
standby voltage
standby current
switch-on current
Diagnostic output (pin 16)
V_DIAG
diagnostic output voltage
note 1
6
−
−
note 2
−
8.5
3.3
V_I(max) = 1 V; f = 1 kHz
−
note 2
−
0
−
−
any short-circuit or clipping −
Notes
1. The circuit is DC adjusted at V_P = 6 to 18 V and AC operating at V_P = 8.5 to 18 V.
2. Only for BTL channel (V_12-10).
TYP.
15
80
6.9
−
−
−
−
−
−
−
12
−
MAX. UNIT
18
V
160 mA
−
V
150 mV
−
V
6.4
V
2
mV
150 mV
2
V
100 µA
40
µA
0.6
V
1999 Dec 14
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