PSMN6R0-25YLB_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN6R0-25YLB
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
25
R_DSon ^VGS^{(V) = 2.6}
(mΩ)
20
15
10
5
0
0
20
003aag115
2.8
3.0
3.5
4.5
10
40
60 _ID(A) 80
2
a
1.5
1
003aag116
4.5V
V_GS= 10V
0.5
0
-60
0
60
120
180
T_j (°C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
V_GS
(V)
8
6
4
20V
003aag117
5V
V_DS= 12V
2
0
0
5
10
15
20
25
Q_G (nC)
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN6R0-25YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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