PSMN6R0-25YLB_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN6R0-25YLB
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
100
g_fs
(S)
80
60
40
20
0
0
003aag111
20
40
60
80
I_D (A)
80
I_D
(A)
60
003aag112
40
T_j = 150 °C
T_j = 25 °C
20
0
0
1
2
3
4
V_GS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
10^-1
I_D
(A)
10^-2
003aag113
Min Typ Max
10^-3
10^-4
10^-5
10^-6
0
1
2
3
V_GS (V)
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
3
V_GS(th)
(V)
Max (1mA)
2
003aag114
I_D= 5mA _1mA
1 Min (5mA)
0
-60
0
60
120
180
T_j (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN6R0-25YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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