PSMN6R0-25YLB_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN6R0-25YLB
N-channel 25 V 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 6. Characteristics …continued
Symbol
Parameter
Q_oss
output charge
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
t_a
reverse recovery rise time
t_b
reverse recovery fall time
Conditions
V_GS = 0 V; V_DS = 12 V; f = 1 MHz
I_S = 20 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 12 V
V_GS = 0 V; I_S = 20 A;
dI_S/dt = -100 A/µs; V_DS = 12 V;
see Figure 18
Min Typ Max Unit
-
6.6 -
nC
-
0.85 1.1 V
-
27
-
ns
-
18
-
nC
-
15
-
ns
-
12
-
ns
80
10 4.5 3.5
I_D
(A)
60
40
20
0
0
1
2
003aag109
V_GS(V) = 3.0
2.8
2.6
2.4
2.2
3
4
5
V_DS(V)
40
R_DSon
(mΩ)
30
003aag110
20
10
0
0
4
8
12
16
V_GS (V)
Fig 6. Output characteristics; drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN6R0-25YLB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 31 October 2011
© NXP B.V. 2011. All rights reserved.
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