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| PSMN5R0-100ES_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 100 V 5 mΩ standard level MOSFET in I2PAK | |||
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NXP Semiconductors
PSMN5R0-100ES
N-channel 100 V 5 m⦠standard level MOSFET in I2PAK
7
RDSon
(mΩ)
6
5
4
003aaf732
VGS(V) =5.5
6.0
8.0
10.0
15.0
20.0
3
0
30
60
90
120 ID(A) 150
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
6
4
2
80V
50V
VDS= 20V
003aaf729
105
C
(pF)
104
103
102
003aaf730
Ciss
Coss
Crss
0
0
50
100
150 QG (nC) 200
10
10-1
1
10 VDS(V) 102
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN5R0-100ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 26 September 2011
© NXP B.V. 2011. All rights reserved.
9 of 15
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